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Chen-Jung Chien

from Mountain View, CA
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Related to:
Wenching ChienWei Chen Chien, 55Chen Chinyin Yin, 48Chen J Chien, 58Sophia Hui Chien, 53Dongwei Chen, 61Hwa C Chen, 59
Connected to:
Alex Y Chien, 59Amanda Chien, 46Annie T Chien, 49Colleen M Chien, 53Cooper Chien, 49Ellen Y Chien, 60Erika B Chien, 40Hsinyi Chien, 31Isaac S Chien, 28Kai L Chien, 80

Chen-Jung Chien Phones & Addresses

  • Mountain View, CA

Publications

Us Patents

Protective Layer For Continuous Gmr Design Using Reverse Photo Mask

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US Patent:
6447689, Sep 10, 2002
Filed:
Jun 5, 2000
Appl. No.:
09/584424
Inventors:
Chen-Jung Chien - Sunnyvale CA
Kochan Ju - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 539
US Classification:
216 22, 216 40, 216 47, 360113, 360324 R, 36032731
Abstract:
An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.

Robust Hard Bias/Conductor Lead Structures For Future Gmr Heads

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US Patent:
6632474, Oct 14, 2003
Filed:
Oct 13, 2000
Appl. No.:
09/689932
Inventors:
Cheng T. Horng - San Jose CA
Chen-Jung Chien - Sunnyvale CA
Chyu Jiuh Torng - Pleasanton CA
Ru-Ying Tong - San Jose CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
B05D 512
US Classification:
427131, 427129, 427132, 427130
Abstract:
A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.

Process For Manufacturing A Spin Valve Recording Head

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US Patent:
6668443, Dec 30, 2003
Filed:
Jul 30, 2001
Appl. No.:
09/917347
Inventors:
Chen-Jung Chien - Sunnyvale CA
Moris Dovek - San Jose CA
Po-Kang Wang - San Jose CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
US Classification:
2960318, 2960315, 20419235, 216 22, 3063272
Abstract:
The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

Method For Fabricating Lead Overlay (Lol) On The Bottom Spin Valve Gmr Read Sensor

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US Patent:
6785954, Sep 7, 2004
Filed:
Apr 17, 2002
Appl. No.:
10/124004
Inventors:
Cheng T. Horng - San Jose CA
Chen-Jung Chien - Sunnyvale CA
Ru-Ying Tong - San Jose CA
Hui-Chuan Wang - Pleasanton CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
US Classification:
2960314, 2960307, 2960308, 2960312, 2960316, 2960318, 300322, 30032412
Abstract:
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.

Process For Manufacturing A Magnetic Read Head

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US Patent:
6842969, Jan 18, 2005
Filed:
Apr 5, 2002
Appl. No.:
10/116984
Inventors:
Moris Dovek - San Jose CA, US
Po-Kang Wang - San Jose CA, US
Chen-Jung Chien - Sunnyvale CA, US
Yun-Fei Li - Fremont CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
H04R 3100
US Classification:
2960314, 2960307, 2960309, 2960314, 3603241, 36032411, 36032412, 427127, 427128
Abstract:
In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by using a liftoff technique to form, on the free layer, a buffer layer having a trapezoidal cross-section, sloping sidewalls, and a central area of uniform thickness, whose width defines the read track. A suitable bias layer and leads are then deposited on this buffer layer.

Junction Stability And Yield For Spin Valve Heads

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US Patent:
6879474, Apr 12, 2005
Filed:
Nov 21, 2003
Appl. No.:
10/718878
Inventors:
Chen-Jung Chien - Sunnyvale CA, US
Moris Dovek - San Jose CA, US
Po-Kang Wang - San Jose CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B005/39
US Classification:
36032412
Abstract:
The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

Abutted Junction Gmr Read Head With An Improved Hard Bias Layer And A Method For Its Fabrication

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US Patent:
7016165, Mar 21, 2006
Filed:
Apr 2, 2001
Appl. No.:
09/822491
Inventors:
Chen-Jung Chien - Milpitas CA, US
Cheng T. Horng - San Jose CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5/127
US Classification:
36032412
Abstract:
A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.

Bottom Spin Valve Sensor Having A Lead Overlay (Lol) Structure Fabricated Thereon

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US Patent:
7050273, May 23, 2006
Filed:
Aug 20, 2004
Appl. No.:
10/922540
Inventors:
Cheng T. Horng - San Jose CA, US
Chen-Jung Chien - Sunnyvale CA, US
Ru-Ying Tong - San Jose CA, US
Hui-Chuan Wang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5/39
US Classification:
3603241, 360322, 36032412
Abstract:
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
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Chen-Jung Chien from Mountain View, CA Get Report