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Anke E Abken

from Port Hueneme, CA
Age ~61
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Also known as:
Ablke E Abken, Anke E Abren
Connected to:
Behzad Abkenari, 63Mitra Abkenari, 63Scott A Abla, 41Michael B Ablack, 47Ali Ablad, 47Michael E Ablahani, 38Baybee H Ablan, 69Love Ablan, 50Samantha L Ablan, 39Thelma A Ablan, 83

Anke Abken Phones & Addresses

  • Port Hueneme, CA
  • 10254 Blue Ridge Dr, Whitehouse, OH 43571 (419) 877-4739
  • Atlanta, GA
  • Toledo, OH
  • Santa Barbara, CA

Industries

Semiconductors

Resumes

Resumes

Anke Abken Photo 1

Sr. Scientist At Xunlight Corporation; Xunlight 26 Solar;

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Location:
Toledo, Ohio Area
Industry:
Semiconductors

Publications

Us Patents

Plasma-Treated Photovoltaic Devices

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US Patent:
20090255578, Oct 15, 2009
Filed:
Jan 15, 2009
Appl. No.:
12/320059
Inventors:
David Eaglesham - Perrysburg OH, US
Anke Abken - Toledo OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/0296
H01L 31/18
H01L 31/02
US Classification:
136256, 438 93, 257431, 136252, 257E2109, 257E31015
Abstract:
A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer.

Photovoltaic Devices Including Controlled Copper Uptake

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US Patent:
20100212731, Aug 26, 2010
Filed:
Feb 18, 2010
Appl. No.:
12/708282
Inventors:
Anke Abken - Whitehouse OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/00
H01L 31/18
US Classification:
136255, 438 57, 257E31001
Abstract:
A photovoltaic cell can include a substrate having a copper-doped semiconductor layer. The doping can be mediated with a salt.

Doped Metal Contact

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US Patent:
20100307561, Dec 9, 2010
Filed:
Jun 3, 2010
Appl. No.:
12/793461
Inventors:
Benyamin Buller - Sylvania OH, US
Long Cheng - Perrysburg OH, US
Akhlesh Gupta - Sylvania OH, US
Anke Abken - Whitehouse OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/042
H01L 31/0256
H01L 31/0288
H01L 31/18
US Classification:
136244, 136262, 136255, 438 86, 257E31032, 257E31003
Abstract:
A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer.

Metal Barrier-Doped Metal Contact Layer

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US Patent:
20100307568, Dec 9, 2010
Filed:
Jun 3, 2010
Appl. No.:
12/793469
Inventors:
Long Cheng - Perrysburg OH, US
Akhlesh Gupta - Sylvania OH, US
Anke Abken - Whitehouse OH, US
Benyamin Buller - Sylvania OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/0203
H01L 31/0256
H01L 31/18
US Classification:
136251, 136252, 136265, 438 98, 257E31124
Abstract:
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

Dopant-Containing Contact Material

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US Patent:
20100326491, Dec 30, 2010
Filed:
Jun 3, 2010
Appl. No.:
12/793456
Inventors:
Long Cheng - Perrysburg OH, US
Akhlesh Gupta - Sylvania OH, US
Anke Abken - Whitehouse OH, US
Benyamin Buller - Sylvania OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/042
H01L 31/04
H01L 31/18
US Classification:
136244, 136255, 20419217, 438 84, 257E31015
Abstract:
A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Plasma-Treated Photovoltaic Devices

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US Patent:
20110136294, Jun 9, 2011
Filed:
Feb 7, 2011
Appl. No.:
13/022294
Inventors:
David Eaglesham - Perrysburg OH, US
Anke Abken - Whitehouse OH, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/18
US Classification:
438 93, 257E31001
Abstract:
A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer.

Metal Barrier-Doped Metal Contact Layer

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US Patent:
20130005075, Jan 3, 2013
Filed:
Sep 13, 2012
Appl. No.:
13/615128
Inventors:
Long Chen - Perrysburg OH, US
Akhlesh Gupta - Sylvania OH, US
Anke Abken - Whitehouse OH, US
Benyamin Buller - Sylvania OH, US
International Classification:
H01L 31/18
US Classification:
438 98, 257E31124
Abstract:
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

Photovoltaic Devices Including Doped Semiconductor Films

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US Patent:
20090194166, Aug 6, 2009
Filed:
Oct 31, 2008
Appl. No.:
12/262424
Inventors:
Rick C. Powell - Ann Arbor MI, US
Upali Jayamaha - Toledo OH, US
Anke Abken - Toledo OH, US
Markus Gloeckler - Perrysburg OH, US
Akhlesh Gupta - Sylvania OH, US
Roger T. Green - Monclova OH, US
Peter Meyers - Lakeside MT, US
Assignee:
First Solar, Inc. - Perrysburg OH
International Classification:
H01L 31/0256
H01L 31/18
H01L 31/04
US Classification:
136260, 438 57, 257E31003
Abstract:
A photovoltaic cell can include a dopant in contact with a semiconductor layer.
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Anke E Abken from Port Hueneme, CA, age ~61 Get Report