Andris N Ezis

47543124, Jun 28, 1988

Apr 7, 1987

7/035332

Dietrich W. Langer - Yellow Springs OH
Andris Ezis - Fairborn OH

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 2714
H01L 2912
H01L 2702

357 30

This invention is directed to a three-terminal semiconductor device which acts as a differential light detector. It is based on the operation of two reverse biased PIN photodetectors where one receives light through its P-doped surface and the other through its N-doped surface. The device is configured to be compatible with applications in integrated optics and with fiber optics. In principle of operation the invention relies on the production and collection of electrons from the detection of a first light intensity and the production and collection of holes from the detection of the intensity of a second light. This is done in a connected or integrated semiconductor which allows the recombination of electrons and holes. The excess number of electrons or holes, depending upon which light is received with the greatest intensity, is extracted from the recombination region and is the basis for the output signal.

20230056901, Feb 23, 2023

Nov 7, 2022

17/981744

- Falls Church VA, US
Robert M. Young - Ellicott City MD, US
Keith H. Chung - Columbia MD, US
Andris Ezis - Ellicott City MD, US
Ishan Wathuthanthri - Baltimore MD, US

H01L 27/24
H01L 45/00
H01L 21/8249

A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

20210057487, Feb 25, 2021

Aug 19, 2019

16/544212

- Falls Church VA, US
Robert M. Young - Ellicott City MD, US
Keith H. Chung - Columbia MD, US
Andris Ezis - Ellicott City MD, US
Ishan Wathuthanthri - Baltimore MD, US

H01L 27/24
H01L 45/00
H01L 21/8249

A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.