Andrew Alan Allerman

6365428, Apr 2, 2002

Jun 15, 2000

09/596028

Walter J. Zubrzycki - Albuquerque NM
Gregory A. Vawter - Albuquerque NM
Andrew A. Allerman - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01L 2100

438 32, 438 22, 438 29, 438 45, 438 46, 438 47, 438962

A new class of fabrication methods for embedded distributed grating structures is claimed, together with optical devices which include such structures. These new methods are the only known approach to making defect-free high-dielectric contrast grating structures, which are smaller and more efficient than are conventional grating structures.

6393038, May 21, 2002

Oct 4, 1999

09/412044

Thomas D. Raymond - Edgewood NM
William J. Alford - Albuquerque NM
Mary H. Crawford - Albuquerque NM
Andrew A. Allerman - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01S 310

372 22, 372 50, 372 98, 372 75

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

7915626, Mar 29, 2011

Aug 15, 2006

11/504885

Andrew A. Allerman - Tijeras NM, US
Mary H. Crawford - Albuquerque NM, US
Daniel D. Koleske - Albuquerque NM, US
Stephen R. Lee - Albuquerque NM, US

Sandia Corporation - Albuquerque NM

H01L 29/22
H01L 29/24

257 95, 257103

A denticulated Group III nitride structure that is useful for growing AlGaN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

8349633, Jan 8, 2013

May 26, 2009

12/471690

Andrew A. Allerman - Tijeras NM, US
Mary H. Crawford - Albuquerque NM, US
Stephen R. Lee - Albuquerque NM, US

Sandia Corporation - Albuquerque NM

H01L 21/00

438 46, 438 29

A denticulated Group III nitride structure that is useful for growing AlGaN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

60711094, Jun 6, 2000

Feb 24, 1999

9/256819

Robert M. Biefeld - Albuquerque NM
Andrew A. Allerman - Albuquerque NM
Kevin C. Baucom - Albuquerque NM

Sandia Corporation - Albuquerque NM

C23C 1618

42525534

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al. sub. X In. sub. 1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525. degree. C. to produce Al. sub. x In. sub. 1-x Sb crystalline materials wherein x is greater than 0. 002 and less than one.

59955295, Nov 30, 1999

Apr 10, 1997

8/838573

Steven R. Kurtz - Albuquerque NM
Robert M. Biefeld - Albuquerque NM
Andrew A. Allerman - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01S 319

372 45

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6. mu. m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

62522876, Jun 26, 2001

May 19, 1999

9/314778

Steven R. Kurtz - Albuquerque NM
Andrew A. Allerman - Albuquerque NM
John F. Klem - Albuquerque NM
Eric D. Jones - Edgewood NM

Sandia Corporation - Albuquerque NM

H01L 3106

257461

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0. 95-1. 2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In. sub. x Ga. sub. 1-x As. sub. 1-y N. sub. y with 0

62489925, Jun 19, 2001

Jun 18, 1999

9/336340

Albert G. Baca - Albuquerque NM
Guillermo M. Loubriel - Albuquerque NM
Alan Mar - Albuquerque NM
Fred J Zutavern - Albuquerque NM
Harold P. Hjalmarson - Albuquerque NM
Andrew A. Allerman - Albuquerque NM
Thomas E. Zipperian - Edgewood NM
Martin W. O'Malley - Edgewood NM
Wesley D. Helgeson - Albuquerque NM
Gary J. Denison - Sandia Park NM
Darwin J. Brown - Albuquerque NM
Charles T. Sullivan - Albuquerque NM
Hong Q. Hou - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01J 4014

250214LS

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.