Search

Ananda Kumar

from Baltimore, MD
Age ~55

Ananda Kumar Phones & Addresses

  • 829 Belvedere Ave, Baltimore, MD 21212 (410) 435-6417
  • 3501 Saint Paul St, Baltimore, MD 21218 (410) 366-6849
  • Toledo, OH
  • Belmont, CA
  • Atlanta, GA
  • Cleveland, OH
  • 829 E Belvedere Ave, Baltimore, MD 21212

Work

Position: Clerical/White Collar

Education

Degree: Associate degree or higher

Resumes

Resumes

Ananda Kumar Photo 1

Principal

View page
Location:
Baltimore, MD
Industry:
Medical Devices
Work:
Resonant Research Jul 2007 - Dec 2013
Technical Director

Johns Hopkins University Feb 2000 - Jul 2008
Research Associate

Lambda Z Technologies Feb 2000 - Jul 2008
Principal

Ut Southwestern Medical Center at Dallas Sep 1996 - Dec 1997
Research Assistant
Education:
The Johns Hopkins University 2002 - 2008
Doctorates, Doctor of Philosophy, Electrical Engineering, Computer Engineering
The University of Toledo 1998 - 1999
Masters, Biomedical Engineering, Bioengineering
Mercer University 1993 - 1996
Bachelors, Medical Engineering
St. John's College, Jaffna
Mercer University
Skills:
Biomedical Engineering
Image Processing
Medical Imaging
Signal Processing
Mri
Statistics
Image Analysis
Matlab
Computer Vision
Mathematical Modeling
Rf Coils For Mri
Em Modeling and Simulations For Rf Safety For Mri
Ananda Kumar Photo 2

Research Associate

View page
Location:
Baltimore, MD
Industry:
Medical Devices
Work:
Johns Hopkins University
Research Associate
Ananda Kumar Photo 3

Ananda Kumar

View page
Ananda Kumar Photo 4

Ananda Kumar

View page
Ananda Kumar Photo 5

Ananda Kumar

View page
Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ananda Kumar
President
Lightcarrier
1999 Blackfoot Dr, Fremont, CA 94539
Ananda Kumar
President
SIRAMICS INC
1999 Blackfoot Dr, Fremont, CA 94539
1999 Blackhawk Dr, Fremont, CA 94539
Ananda Kumar
Research And Development Staff
Hopkins Johns University
College/University
733 N Broadway, Baltimore, MD 21205
(410) 955-3061
Ananda Kumar
Resonant Research, LLC
Mfg Electromedical Equipment Commercial Physical Research
829 E Belvedere Ave, Baltimore, MD 21212

Publications

Us Patents

Electrostatic Chuck Having A Plurality Of Gas Inlet Channels

View page
US Patent:
6370006, Apr 9, 2002
Filed:
Feb 17, 2000
Appl. No.:
09/506423
Inventors:
Ananda H. Kumar - Milpitas CA
Kadthala Narendrnath - San Jose CA
Shamouil Shamouilian - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
An electrostatic chuck and a process of manufacturing an electrostatic chuck for supporting a semiconductor wafer during wafer processing and for providing a plurality of gas inlet channels extending through the chuck and through which thermal transfer gas can be supplied to the back side of the wafer to enhance the thermal transfer between the wafer and the chuck, embedding a plurality of inserts in a ceramic electrostatic chuck, each insert comprising a matrix of the ceramic of which the electrostatic chuck is made and a plurality of removable elongate members, and removing the elongate members to form a plurality of elongate holes providing the plurality of gas inlet channels.

Dielectric Covered Electrostatic Chuck

View page
US Patent:
6414834, Jul 2, 2002
Filed:
Jun 16, 2000
Appl. No.:
09/596108
Inventors:
Edwin C. Weldon - Los Gatos CA
Kenneth S. Collins - San Jose CA
Arik Donde - Cupertino CA
Brian Lue - Mountain View CA
Dan Maydan - Los Altos Hills CA
Robert J. Steger - Cupertino CA
Timothy Dyer - Tempe AZ
Ananda H. Kumar - Milpitas CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
Dennis S. Grimard - Ann Arbor MI
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
An electrostatic chuck useful for holding a substrate in a high density plasma, comprises an electrode at least partially covered by a semiconducting dielectric , wherein the semiconducting dielectric may have an electrical resistance of from about 5Ã10 cm to about 8Ã10 cm.

Process Chamber Having Improved Temperature Control

View page
US Patent:
6440221, Aug 27, 2002
Filed:
May 20, 1998
Appl. No.:
09/082430
Inventors:
Shamouil Shamouilian - San Jose CA
Ananda H. Kumar - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Eric Farahmand E Askarinam - Sunnyvale CA
Edwin C. Weldon - Los Gatos CA
Michael Rice - Pleasanton CA
Kenneth S. Collins - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118724, 118723 I, 20429809, 156345
Abstract:
A temperature control system is used to control the temperature of a process chamber during processing of a semiconductor substrate The temperature control system comprises a heat exchanger plate for removing heat from the chamber and a heat transfer member for conducting heat to the heat exchanger plate The heat transfer member comprises a lower heat conduction surface bonded to an external surface of the chamber and an upper heat transmitting surface thermally coupled to the heat exchanger plate Preferably, the temperature control assembly comprises a heater for heating the chamber and a computer control system for regulating the heat removed by the heat exchanger plate as well as the heat supplied by the heater to maintain the chamber at substantially uniform temperatures.

Electrostatic Chuck Having Improved Electrical Connector And Method

View page
US Patent:
6462928, Oct 8, 2002
Filed:
May 7, 1999
Appl. No.:
09/306944
Inventors:
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Surinder S. Bedi - Fremont CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Francisco CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
An electrostatic chuck comprises an electrical connector which is connected to the electrode to conduct an electrical charge to the electrode The electrical connector comprises a refractory metal having a melting temperature of at least about 1500Â C. , such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector is bonded to the electrode by a metal having a softening temperature of less than about 600Â C. , such as aluminum, indium, or low melting point alloys.

Support For Supporting A Substrate In A Process Chamber

View page
US Patent:
6490144, Dec 3, 2002
Filed:
Nov 29, 1999
Appl. No.:
09/450791
Inventors:
Kadthala R. Narendrnath - San Jose CA
Syed H. Askari - San Jose CA
Dennis S. Grimard - Ann Arbor MI
Surinder S. Bedi - Fremont CA
Ananda H. Kumar - Milpitas CA
Shamouil Shamouilian - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
A chamber for processing a substrate comprises a support comprising a dielectric enveloping an electrode The electrode may be chargeable to electrostatically hold the substrate or may be chargeable to form an energized gas in the chamber to process the substrate A base is below the support and a compliant member is positioned between the support and the base The compliant member may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric and the base.

Electrostatic Chuck Bonded To Base With A Bond Layer And Method

View page
US Patent:
6490146, Dec 3, 2002
Filed:
Aug 13, 2001
Appl. No.:
09/929806
Inventors:
You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01G 2300
US Classification:
361234, 361115, 361103
Abstract:
An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about Â30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Electrostatic Chuck Having Heater And Method

View page
US Patent:
6538872, Mar 25, 2003
Filed:
Nov 5, 2001
Appl. No.:
09/307214
Inventors:
You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01G 2300
US Classification:
361234, 361115, 361103
Abstract:
An electrostatic chuck for holding a substrate comprises an electrostatic member made from a dielectric covering an electrode that is chargeable to electrostatically hold the substrate A base that includes a heater is joined to the electrostatic member The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Multi-Layer Ceramic Electrostatic Chuck With Integrated Channel

View page
US Patent:
6639783, Oct 28, 2003
Filed:
Sep 8, 1998
Appl. No.:
09/149807
Inventors:
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Ananda H. Kumar - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234, 279128
Abstract:
A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.
Ananda Kumar from Baltimore, MD, age ~55 Get Report