Allen J Chang

7457092, Nov 25, 2008

Dec 7, 2005

11/296753

Allen Chang - Fremont CA, US
Zhinan Wei - San Jose CA, US

Alpha & Omega Semiconductor, LLD.

H02H 3/02

361 939, 361 57

A circuit and method for controlling a MOSFET based switch that includes two back-to-back FET to block current flow in the OFF state irrespective of the polarity of the voltage differential across the switch. The MOSFET based switch further has a built-in current limit function by sensing the current flow through one of the two MOSFET switches. Furthermore, the bilateral current-limited switch further includes circuitry required for controlling both P type and N type FET in either common drain or common source configuration.

7728655, Jun 1, 2010

Oct 10, 2008

12/249162

Kevin Ng - Fremont CA, US
Zhinan Wei - San Jose CA, US
Wai-Keung Peter Cheng - Union City CA, US
Allen Chang - Fremont CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

G05F 3/02

327543

A current limiting load switch for bridging supply Vss and load with a reference voltage VRdynamically generated by a VR-generator is proposed. It includes: A pair of power FET and sense FET interconnected in split-current configuration. The FET pair develops a load voltage while limiting load current Iload to a preset maximum Imax. The FET pair is sized to draw device currents Ipower and Is with RATIO=Is/Ipower

7750447, Jul 6, 2010

Jun 11, 2007

11/761313

Allen Chang - Fremont CA, US
Wai-Keung Peter Cheng - Union City CA, US

Alpha & Omega Semiconductor, Ltd - Hamilton

H01L 23/495
H01L 23/48
G05F 1/00

257676, 257777, 323222

A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

7825508, Nov 2, 2010

Jul 31, 2007

11/830996

François Hébert - San Mateo CA, US
Allen Chang - Fremont CA, US

Alpha Omega Semiconductor, Inc. - Sunnyvale CA

H01L 23/34

257724, 257777, 257E23003

A DC-DC buck converter in multi-die package is proposed having an output inductor, a low-side Schottky diode and a high-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a first die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the first die pad via an insulating die bond. Alternatively, the first die pad is grounded. The vertical MOSFET is a top drain N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the first die pad. The PRC is attached atop the first die pad via a conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.

8008897, Aug 30, 2011

Jun 11, 2007

11/761301

Allen Chang - Fremont CA, US
Wai-Keung Peter Cheng - Union City CA, US

Alpha & Omega Semiconductor, Ltd - Hamilton

G05F 1/10
H01L 25/04

323222, 257777

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

8148817, Apr 3, 2012

Sep 24, 2010

12/889673

François Hébert - San Mateo CA, US
Allen Chang - Fremont CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

H01L 23/34

257724, 257778, 257E23003

A DC-DC buck converter in multi-die package is proposed having an output inductor, a low-side Schottky diode and a high-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a first die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the first die pad via an insulating die bond. Alternatively, the first die pad is grounded. The vertical MOSFET is a top drain N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the first die pad. The PRC is attached atop the first die pad via a conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.

8456141, Jun 4, 2013

Sep 1, 2011

13/224157

Allen Chang - Fremont CA, US
Wai-Keung Peter Cheng - Union City CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

G05F 1/10
H01L 25/04

323222, 257777

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.

8515912, Aug 20, 2013

Jul 15, 2010

12/836801

John Kenneth Garrod - Palo Alto CA, US
John Antonio Carrino - Menlo Park CA, US
Katherine Brainard - East Palo Alto CA, US
Jacob Scott - Berkeley CA, US
Allen Chang - Mountain View CA, US

Palantir Technologies, Inc. - Palo Alto CA

G06F 17/30

707638

A computer-based method and system for sharing and deconflicting data changes amongst a plurality of replication sites. In a particular embodiment, data changes at sites to data objects are tracked by each site on a per-data object basis using per-data object version vectors. In another particular embodiment, data changes at sites to links connecting two data objects are tracked by each site on a per-link set basis using per-link set version vectors. In another particular embodiment, per-object version vectors are used to detect a conflict resulting from concurrent changes at two or more sites in which one of the concurrent changes includes an object resolution change.