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Alexej V Pogrebnyakov

from Altoona, PA
Age ~69
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Also known as:
Alexe J Pogrebnyakov
Related to:
Ivan Pogrebnyakov, 38Nicolai A Pogrebnyakov, 44
Connected to:
Julia Pogrebnyak, 48Janet Pogrzeba, 67Gary A Pogson, 69Linda H Pogson, 82Michael D Pogson, 65Phoebe E Pogson, 62Andrew P Pogue, 49Beth A Pogue, 49Chance L Pogue, 48Cheri L Pogue, 65

Alexej Pogrebnyakov Phones & Addresses

  • Altoona, PA
  • 861 Southgate Dr, State College, PA 16801

Work

Company: Penn state university Position: Research scholar

Industries

Higher Education

Resumes

Resumes

Alexej Pogrebnyakov Photo 1

Research Scholar

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Location:
State College, PA
Industry:
Higher Education
Work:
Penn State University
Research Scholar

Publications

Us Patents

Method For Producing Boride Thin Films

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US Patent:
20030219911, Nov 27, 2003
Filed:
Mar 25, 2003
Appl. No.:
10/395892
Inventors:
Xianghui Zeng - State College PA, US
Alexej Pogrebnyakov - State College PA, US
Xiaoxing Xi - State College PA, US
Joan Redwing - State College PA, US
D. Schlom - State College PA, US
International Classification:
H01L021/00
US Classification:
438/002000
Abstract:
Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Method For Producing Doped, Alloyed, And Mixed-Phase Magnesium Boride Films

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US Patent:
20060093861, May 4, 2006
Filed:
Oct 29, 2004
Appl. No.:
10/976123
Inventors:
Alexej Pogrebnyakov - State College PA, US
Xiaoxing Xi - State College PA, US
Joan Redwing - State College PA, US
Qi Li - State College PA, US
International Classification:
C01B 35/04
C01B 25/08
B32B 9/04
US Classification:
428704000, 423289000
Abstract:
Conducting and superconducting doped, magnesium boride materials are formed by a process which combines physical vapor deposition with chemical vapor deposition by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor and a dopant into the chamber which combines with the magnesium vapor to form the material. Embodiments include forming carbon-doped magnesium diboride film and powder with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, with a hydrogen carrier gas together with a borane precursor in a chamber having a source of magnesium vapor.
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Alexej V Pogrebnyakov from Altoona, PA, age ~69 Get Report