Alexei N Koudymov

7795672, Sep 14, 2010

May 9, 2007

11/746088

Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US

Sensor Electronic Technology, Inc. - Columbia SC

H01L 29/94

257331, 257401, 438692

A field effect transistor that can be operated as a low voltage Class Fradio frequency (RF) amplifier with harmonic tuning is provided. The field effect transistor includes a common electrode, a gate, and multiple separate electrodes. The common electrode can comprise a source or drain, while the separate electrodes can comprise drains or sources, respectively. The gate can be profiled in a manner that forms multiple gate sections, each having a unique gate length within the gate sections. Each separate electrode can correspond to one of the plurality of gate sections. When operated as a Class FRF amplifier with a linear harmonic input, the output signal will comprise a non-linear square wave with sharp fronts and relatively flat peak states.

8277734, Oct 2, 2012

May 12, 2009

12/464413

Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US
Remigijus Gaska - Columbia SC, US

Sensor Electronic Technology, Inc. - Columbia SC

A61L 2/28
A61L 2/24
A61L 2/00
G01D 11/26
G01N 1/00
G01N 33/02
G01N 21/00
G01N 21/75
F01N 3/20
G05B 1/00
B01J 19/00
F24F 3/16

422119, 422105, 422108, 422 3, 422 22, 436 20, 436164, 62 78, 62126

Ultraviolet radiation is shone within an area and detected. The detected ultraviolet radiation is monitored over a period of time to determine a set of biological activity dynamics for the area. Ultraviolet radiation detected during a calibration period can be used to provide a baseline with which analysis of subsequently detected ultraviolet radiation is compared and analyzed. When the presence of biological activity is determined within the area, ultraviolet radiation and/or one or more other approaches can be utilized to suppress the biological activity.

8299835, Oct 30, 2012

Feb 2, 2009

12/364140

Alexei Koudymov - Troy NY, US
Grigory Simin - Columbia SC, US
Michael Shur - Latham NY, US
Remis Gaska - Columbia SC, US

Sensor Electronic Technology, Inc. - Columbia SC

H03L 5/00

327308, 327430, 333103

A switch circuit is provided that includes at least one main switching device and at least one shunt switching device. Each main switching device is connected in series with a conductor that carries an RF signal between an input circuit and an output circuit. Each shunt switching device is connected between a controlling terminal of the main switching device and a high frequency ground. The switch circuit can provide substantially improved OFF state isolation over other approaches.

8339163, Dec 25, 2012

Jun 1, 2010

12/791272

Grigory Simin - Columbia SC, US
Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US
Remigijus Gaska - Columbia SC, US

Sensor Electronic Technology, Inc. - Columbia SC

H03K 3/00

327108, 327565, 327566

A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.

8395324, Mar 12, 2013

Apr 20, 2010

12/763674

Yuriy Bilenko - Columbia SC, US
Remigijus Gaska - Columbia SC, US
Michael Shur - Latham NY, US
Alexei Koudymov - Troy NY, US

Sensor Electronic Technology, Inc. - Columbia SC

H05B 37/02

315152, 315155, 315158, 2502082, 250216

A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.

8497527, Jul 30, 2013

Mar 12, 2009

12/402526

Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US
Remigijus Gaska - Columbia SC, US

Sensor Electronic Technology, Inc. - Columbia SC

H01L 29/66

257183, 257587, 257592, 257173, 257355, 257577, 257256, 257257, 257258, 257259

A device comprising a two-dimensional electron gas that includes an active region located in a portion of the electron gas is disclosed. The active region comprises an electron concentration less than an electron concentration of a set of non-active regions of the electron gas. The device includes a controlling terminal located on a first side of the active region. The device can comprise, for example, a field effect transistor (FET) in which the gate is located and used to control the carrier injection into the active region and define the boundary condition for the electric field distribution within the active region. The device can be used to generate, amplify, filter, and/or detect electromagnetic radiation of radio frequency (RF) and/or terahertz (THz) frequencies.

20080150634, Jun 26, 2008

May 9, 2007

11/746093

Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US

H03F 3/217

330251

A two-stage amplifier is provided, which in the first stage, a first amplifier generates a non-linear square wave based on a harmonic input. The non-linear square wave has the same frequency as the harmonic input and is provided as an input to the second stage, in which a second amplifier generates an amplified harmonic output. The first amplifier and/or second amplifier can comprise a group-III nitride-based Heterostructure Field Effect Transistor (HFET). Additionally, the first amplifier can comprise a multi-harmonic Class F amplifier and the second amplifier can comprise a Class E amplifier.

20080272397, Nov 6, 2008

Nov 26, 2007

11/944682

Alexei Koudymov - Troy NY, US
Michael Shur - Latham NY, US
Remigijus Gaska - Columbia SC, US

H01L 29/778

257192, 257E29246

The current invention introduces a modulated field element incorporated into the semiconductor device outside the controlling electrode and active areas. This element changes its conductivity and/or dielectric properties depending on the electrical potentials of the interface or interfaces between the modulated field element and the semiconductor device and/or incident electromagnetic radiation. The element is either connected to only one terminal of the semiconductor device, or not connected to any terminal of a semiconductor device nor to its active area(s). Such an element can be used as modulated field plate, or a part of a field plate, as a passivation layer or its part, as a guard ring or its part, as a smart field or charge control element or its part, as a feedback element or its part, as a sensor element or its part, as an additional electrode or its part, as an electromagnetic signal path or its part, and/or for any other functions optimizing or modernizing device performance.