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Alain C Diebold

from Schenectady, NY
Age ~71
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Also known as:
Alain Charl Diebold, Alain Charles Diebold, Alain A Diebold, Annalisa M Diebold
Phone and address:
1001 Woodfield Dr, Schenectady, NY 12309
(518) 785-0517
Related to:
Kenneth L Diebold, 80Laura L Diebold, 33A DieboldAnnalisa M Diebold, 69
Connected to:
Aaron K Diebold, 38Anne S Diebold, 54Carl H Diebold, 68Christian M Diebold, 34Darin Diebold, 46Derick J Diebold, 41Don W Diebold, 77Erin A Diebold, 49George W Diebold, 77Jamie F Diebold, 51

Alain Diebold Phones & Addresses

  • 1001 Woodfield Dr, Niskayuna, NY 12309 (518) 785-0517
  • Schenectady, NY
  • 4702 Gold Flower Holw, Austin, TX 78731 (512) 458-4970
  • Morristown, NJ
  • Albany, NY

Work

Company: Cnse u albany Position: Professor

Education

Degree: Associate degree or higher

Industries

Electrical/Electronic Manufacturing

Public records

Vehicle Records

Alain Diebold

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Address:
1001 Woodfield Dr, Schenectady, NY 12309
VIN:
JTHBJ46G872077360
Make:
LEXUS
Model:
ES 350
Year:
2007

Resumes

Resumes

Alain Diebold Photo 1

Professor

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Location:
Schenectady, NY
Industry:
Electrical/Electronic Manufacturing
Work:
Cnse U Albany
Professor

Business Records

Name / Title
Company / Classification
Phones & Addresses
Alain Diebold
Executive Director
Eyp, Inc
Architectural Services · Architectural Services Engineering Services
257 E Fuller Rd S, Albany, NY 12203

Publications

Isbn (Books And Publications)

Characterization And Metrology for Ulsi Technology 2005

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Author

Alain C. Diebold

ISBN #

0735402779

Us Patents

Methods For Characterizing Semiconductor Material Using Optical Metrology

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US Patent:
20070081169, Apr 12, 2007
Filed:
Oct 12, 2005
Appl. No.:
11/249175
Inventors:
Alain Diebold - Austin TX, US
James Price - Austin TX, US
International Classification:
G01B 11/14
US Classification:
356625000
Abstract:
Methods for characterizing a semiconductor material using optical metrology are disclosed. In one respect, a electromagnetic radiation source may be directed in a direction substantially parallel to patterns on a semiconductor material. A polarized spectroscopic reflectivity may be obtained, and a critical point data may be determined. Using the critical point data, physical dimensions of the patterns may be determined. In other respects, using optical metrology techniques, a critical point data relating to electron mobility may be determined.

Metallic Gratings And Measurement Methods Thereof

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US Patent:
20160069792, Mar 10, 2016
Filed:
Sep 8, 2015
Appl. No.:
14/847624
Inventors:
- Albany NY, US
Alain C. Diebold - Niskayuna NY, US
Brennan Peterson - Veldhoven, NL
Nicholas Keller - San Francisco NY, US
International Classification:
G01N 21/21
G01N 21/95
G01B 11/02
Abstract:
There is set forth herein in one embodiment, a structure including a metallic grating having a grating pattern, the metallic grating including a critical dimension. The metallic grating can output a spectral profile when exposed to electromagnetic radiation, the spectral profile having a feature. The grating pattern can be configured so that a change of the critical dimension produces a shift in a value of the feature of the spectral profile. A method can include propagating input electromagnetic radiation onto a metallic grating having a two dimensional periodic grating pattern and measuring a critical dimension of the metallic grating using output electromagnetic radiation from the metallic grating.
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Alain C Diebold from Schenectady, NY, age ~71 Get Report